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Product Details
  • Product name: 6500V series

  • Product model: FZ1800R12KF4
  • Product manufacturer: Infineon
  • Product Price: 0
  • Discount price: 0
  • Product documentation:
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a brief introdction:
EUPEC / Infineon igbt has the advantages of high-precision chip manufacturing technology. Combined with EUPEC's superior position in packaging technology, the IGBT module produced has strong competitiveness. Infineon igbt can provide a full range of IGBT modules in a variety of packages from currents 6A to 3600A; voltages from 600V, 1700V, 2500V, 3300V to 6500V
detail intruduction:

Infineon igbt modules have a total of eight withstand voltage levels for users to choose:
400 V 600V 650V 1200V 1700V 3300V 4500V 6500V
Each of them has multiple chip types for users to choose from. It can be distinguished from the model suffix according to the switching frequency.

Infineon, eupec
600V Series Infineon igbt

1200V series Infineon igbt

1600V series Infineon igbt

1700V series Infineon igbt

3300V series Infineon igbt

6500V series Infineon igbt

DN2 series: frequency range 10KHZ-20KHZ, saturation voltage drop: 2.5V-3.1V
DN2 series: frequency range 4KHZ-8KHZ, saturation voltage drop: 2.1V-2.4V
KS4 series: frequency range 15KHZ-30KHZ, saturation voltage drop: 3.2V-3.85V
KE3 series: frequency range 4KHZ-10KHZ, saturation voltage drop: 1.7V-2.0V
KT3 series: frequency range 8KHZ-15KHZ, saturation voltage drop: 1.7V-1.9V
EUPEC IGBT device (including tax price, the current value in the IGBT model is nominal when TC = 80 ℃, and the subsequent current value is nominal when TC = 25 ℃)
1.Two units-1200V / 1700V / 3300V / 6500V series
2. Two units-600V series
3. Six units (low saturation voltage drop type)
4. Power integration module (three-phase bridge + seven units + temperature sensor
5.One unit-1200V / 1700V
6, four units (H bridge 30KHZ high frequency)
Infineon IGBT single tube 600V / 1200V
Features:
☆ Adopt trench gate + field stop IGBT process
☆ Small parameter dispersion, convenient for mass production
☆ High reliability, stable high temperature performance, excellent characteristics, and the best performance-price ratio
☆ The current in the model is nominal when Tc = 100 ℃, and the effective current is large.
☆ 600V IGBT single tube * Large working junction temperature can reach Tjmax≤175 ℃
☆ Built-in anti-parallel soft and fast recovery (Emcon) high efficiency diode
☆ The positive temperature is easily saturated by the coefficient saturation voltage drop
V. Infineon Fast Recovery Diode 600V / 1200V
Features:
☆ Infineon brick technology (Emcon) fast soft recovery diode; reverse recovery softness factor S <4.4
☆ Low reverse recovery charge Qrr <2900nc
☆ Low forward voltage drop: VF = 1.5V and does not increase with temperature, easy to connect in parallel.
☆ * High working junction temperature up to Tj = 175 ℃ Good high temperature characteristics

系列 6500V series

Product number

I c (A)

V ce (sat)

t on

t off

R th (jc)

Encapsulation

T c = 80

Max (V)

(us)

(us)

K / W

FZ200R65KF2

200

5.9

0.75

5.5

0.033

IHV 73mm

FZ200R65KF1

200

5.9

0.75

5.5

0.033

IHV 73mm

FZ400R65KF2

400

5.9

0.75

5.5

0.017

IHV 130mm

FZ400R65KF1

400

5.9

0.75

5.5

0.017

IHV 130mm

FZ600R65KF2

600

5.9

0.75

5.5

0.011

IHV 190mm

FZ600R65KF1

600

5.9

0.75

5.5

0.011

IHV 190mm

FD200R65KF1-K

200

5.9

0.75

5.5

0.033

IHV 130mm

FD400R65KF1-K

400

5.9

0.75

5.5

0.017

IHV 190mm

DD200S65K1

200

-

-

-

0.063

IHV 130mm

DD400S65K1

400

-

-

-

0.032

IHV 130mm

DD600S65K1

600

-

-

-

0.021

IHV 130mm

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